Semiconductor device and method for fabricating the same

Number of patents in Portfolio can not be more than 2000

United States of America

PATENT NO 10600913
APP PUB NO 20180350983A1
SERIAL NO

16100804

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Abstract

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A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes first and second gate stack structures formed in first and second regions, respectively, wherein the first gate stack structure is formed adjacent a first channel region and comprises a first gate insulating film having a first thickness formed on the first channel region, a first function film having a second thickness formed on the first gate insulating film and a first filling film having a third thickness formed on the first function film, wherein the second gate stack structure is formed adjacent a second channel region and comprises a second gate insulating film having the first thickness formed on the second channel region, a second function film having the second thickness formed on the second gate insulating film and a second filling film having the third thickness formed on the second function film, wherein the first and second function films, respectively, comprise TiN and Si concentrations that are different from each other.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chung, Won Keun Seoul, KR 11 27
Hyun, Sang Jin Suwon-si, KR 36 167
Kim, Sang Yong Suwon-si, KR 51 183
Na, Hoon Joo Hwaseong-si, KR 12 60
Oh, Seung Ha Seoul, KR 11 33
Park, Jong Ho Suwon-si, KR 97 315

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