Porous oxide semiconductor including three-dimensionally interconnected nanopores, mesopores, and macropores, method for preparing the porous oxide semiconductor and gas sensor including the porous oxide semiconductor as gas sensing material
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United States of America
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Mar 31, 2020
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Aug 2, 2018
app pub date -
Jun 30, 2016
filing date -
Jun 30, 2016
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Abstract
The present invention relates to a porous oxide semiconductor including three-dimensionally interconnected nanopores, mesopores, and macropores, a method for preparing the porous oxide semiconductor, and a gas sensor including the porous oxide semiconductor as a gas sensing material. The nanopores have a diameter of 1 nm to less than 4 nm, the mesopores have a diameter of 4 nm to 50 nm, and the macropores have a diameter of 100 nm to less than 1 μm. The oxide semiconductor gas sensor of the present invention exhibits ultrahigh response and ultrafast response to various analyte gases due to the presence of the controlled nanopores, mesopores, and macropores.
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