Chemical mechanical polishing of tungsten using a method and composition containing quaternary phosphonium compounds

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United States of America

PATENT NO 10604678
SERIAL NO

16270725

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Abstract

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A process and composition are disclosed for polishing tungsten containing select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate of tungsten. The process and composition include providing a substrate containing tungsten; providing a stable polishing composition, containing, as initial components: water; an oxidizing agent; select quaternary phosphonium compounds at low concentrations to at least reduce corrosion rate; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate, and corrosion rate of tungsten is reduced.

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Patent Owner(s)

  • ROHRN AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ho, Lin-Chen Taipei, TW 15 7
Lee, Cheng-Ping Miaoli County, TW 21 138
Tsai, Wei-Wen Taichung, TW 19 6

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