Manufacturing method of silicon carbide and silicon carbide manufactured using the same

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United States of America Patent

PATENT NO 10759664
APP PUB NO 20180179071A1
SERIAL NO

15855246

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Abstract

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A method of preparing silicon carbide according to the present invention includes reacting a silicon-containing compound with carbon dioxide, wherein a reducing agent is optionally used.

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Patent Owner(s)

Patent OwnerAddress
KOREA INSTITUTE OF ENERGY RESEARCHDAEJEON 34129

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bae, Ki Kwang Sejong-si, KR 1 3
Cho, Hyun Seok Daejeon, KR 11 42
Cho, Won Chul Daejeon, KR 3 3
Jeong, Seong Uk Daejeon, KR 2 3
Kang, Kyoung-Soo Daejeon, KR 2 3
Kim, Chang Hee Daejeon, KR 31 129
Kim, Jong Won Daejeon, KR 132 1105
Lee, Hae In Busan, KR 10 56
Lee, Jae Goo Daejeon, KR 52 384
Park, Chu Sik Daejeon, KR 1 3
Seo, Myung Won Daejeon, KR 4 7

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