CMP slurry solution for hardened fluid material

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United States of America Patent

PATENT NO 10774241
APP PUB NO 20170158914A1
SERIAL NO

15431174

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A slurry solution for a Chemical Mechanical Polishing (CMP) process includes a wetting agent, a stripper additive that comprises at least one of: N-methyl-2-pyrrolidone (NMP), dimethyl sulfoxide (DMSO), sulfolane, and dimethylformamide (DMF), and an oxidizer additive comprising at least one of: hydrogen peroxide (H2O2), ammonium persulfate ((NH4)2S2O8), peroxymonosulfuric acid (H2SO5), ozone (O3) in de-ionized water, and sulfuric acid (H2SO4).

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chou, Yu-Wei Hsinchu, TW 15 48
Lee, Shen-Nan Hsinchu, TW 56 195
Lien, Kuo-Cheng Hsinchu, TW 13 50
Lin, Chang-Sheng Hsinchu, TW 59 166
Lin, Kuo-Yin Jhubei, TW 33 174
Liu, Wen-Kuei Hsinchu, TW 35 94
Tsai, Teng-Chun Hsinchu, TW 275 2741

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