Post-etch residue removal for advanced node beol processing

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United States of America Patent

PATENT NO 10790187
APP PUB NO 20180204764A1
SERIAL NO

15873531

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Abstract

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The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

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Patent Owner(s)

Patent OwnerAddress
MORGAN STANLEY SENIOR FUNDING INC1300 THAMES STREET 4TH FLOOR BALTIMORE MD 21231

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cooper, Emanuel I Scarsdale, US 71 1001
Hong, Eric Suwon-si, KR 13 42
Hsu, Chia-Jung Billerica, US 104 506
Kim, WonLae Gyeonggi-do, KR 11 11
Payne, Makonnen White Plains, US 8 387
Tu, Sheng-Hung Billerica, US 10 142
Wang, Chieh Ju Billerica, US 5 47

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