nanoarray

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United States of America Patent

PATENT NO 10844510
SERIAL NO

16554860

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Abstract

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A method of forming a one-dimensional nanoarray of In2O3 nanowires on indium foil is disclosed. The nanowires of In2O3 have diameters of 30 nm-50 nm and lengths of 100 nm-200 nm, and are attached to and substantially perpendicular to the surface of the indium foil. The In2O3 nanoarray may have a nanowire density of 200-300 nanowires per μm2 indium foil and a band gap energy of 2.63-3.63 eV. The In2O3 nanoarray may be formed by anodization of indium foil in an electrochemical cell subjected to a voltage of 15-25 V at room temperature.

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Patent Owner(s)

Patent OwnerAddress
KING FAHD UNIVERSITY OF PETROLEUM AND MINERALSDHAHRAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Khan, Ibrahim Dhahran, SA 15 1
Qurashi, Ahsanulhaq Dhahran, SA 9 1

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