Polishing additive composition, polishing slurry composition and method for polishing insulating film of semiconductor element
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United States of America Patent
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Dec 29, 2020
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app pub date -
Dec 20, 2018
filing date -
Nov 15, 2018
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Abstract
The present invention relates to a method for polishing an insulating film of a semiconductor element, the method comprising polishing an insulating film, which is formed by embedding conductive patterns formed on a substrate, with a polishing slurry composition comprising a polishing agent including cerium oxide particles and an anionic dispersant, and a polishing additive composition comprising an anionic polymer, a cationic compound, a nonionic surfactant, a dishing inhibitor, and an amphoteric ionic compound, wherein the anionic polymer has a polymer distribution index (PDI) of 3.5 to 5.5, to remove a step associated with the insulating film.
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