Semiconductor device and method for manufacturing the same

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United States of America Patent

PATENT NO 10916430
APP PUB NO 20180025913A1
SERIAL NO

15654110

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Abstract

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A semiconductor device with favorable electrical characteristics is provided. A source electrode and a drain electrode of a channel-etched transistor are each made to have a stacked-layer structure including a first conductive layer and a second conductive layer. A silicide that contains a metal element contained in the second conductive layer and nitrogen is formed to be in contact with a top surface and a side surface of the second conductive layer. Before etching of the first conductive layer, the silicide is formed by exposing the second conductive layer to an atmosphere containing silane, and plasma treatment is performed in a nitrogen atmosphere without exposure to the air.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTD398 HASE ATSUGI-SHI KANAGAWA-KEN 243-0036

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hamochi, Takashi Tochigi, JP 74 909
Jintyou, Masami Shimotsuga, JP 194 2572
Nakazawa, Yasutaka Tochigi, JP 108 647
Shima, Yukinori Tatebayashi, JP 186 2709
Yamazaki, Shunpei Setagaya, JP 7534 239327

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