Etch chemistries for metallization in electronic devices

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United States of America Patent

PATENT NO 10923514
APP PUB NO 20190148420A1
SERIAL NO

16217563

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Abstract

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In various embodiments, etchants featuring (i) mixtures of hydrochloric acid, methanesulfonic acid, and nitric acid, or (ii) mixtures of phosphoric acid, methanesulfonic acid, and nitric acid, are utilized to etch metallic bilayers while minimizing resulting etch discontinuities between the layers of the bilayer.

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Patent Owner(s)

Patent OwnerAddress
H C STARCK SOLUTIONS COLDWATER LLC460 JAY STREET COLDWATER MI 49036

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brewer, Alex Camarillo, US 4 18
Hogan, Patrick Somerville, US 45 171
Moore, John Camarillo, US 124 1274
Pettit, Jared Camarillo, US 7 51

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