Selective deposition with atomic layer etch reset

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 10998187
APP PUB NO 20200118809A1
SERIAL NO

16713557

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Abstract

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Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.

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Patent Owner(s)

  • LAM RESEARCH CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hausmann, Dennis M Lake Oswego, US 73 10737
Porter, David W Sherwood, US 60 1151
Rainville, Meliha Gozde Lake Oswego, US 10 105
Reddy, Kapu Sirish Portland, US 28 437
Shankar, Nagraj Tualatin, US 35 1317
Sivaramakrishnan, Karthik Tigard, US 5 39
Smith, David Charles Lake Oswego, US 31 1508

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