Polishing composition and polishing method using the same
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United States of America Patent
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May 18, 2021
Grant Date -
May 28, 2020
app pub date -
Dec 20, 2018
filing date -
Nov 23, 2018
priority date (Note) -
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Abstract
The present invention relates to a polishing composition, and more particularly, to a chemical mechanical polishing (CMP) composition used to chemically and mechanically polish a semiconductor wafer. The polishing composition of the present invention, by comprising anion-modified silica polishing particles in which the zeta potential (ζ) is ≤−10 mV, can exhibit excellent polishing performance, and more specifically, which can achieve a high polishing rate with respect to an indium-containing polishing substrate, while improving the dispersibility of the composition and reducing residual defects on the substrate.
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