Etching composition, method for etching insulating layer of semiconductor devices and method for preparing semiconductor devices

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United States of America Patent

PATENT NO 11028321
APP PUB NO 20200131439A1
SERIAL NO

16594491

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Abstract

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An etching composition is provided. The etching composition includes phosphoric acid, phosphoric anhydride, a silane compound represented by Formula 1 below and water:

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Patent Owner(s)

Patent OwnerAddress
SK INNOVATION CO LTDSEOUL 03188
SK INC26 JONG-RO JONGNO-GU SEOUL 03188 03188

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jo, Jin Kyung Yeongju-si, KR 9 9
Kim, Cheol Woo Daejeon, KR 47 310
Kim, Young Bom Yeongju-si, KR 9 9
Kwak, Jae Hoon Yeongju-si, KR 23 60
Lee, Jong Ho Yeongju-si, KR 415 3173
Lee, Kwang Kuk Daejeon, KR 26 77
Shim, Yu Na Daejeon, KR 34 24

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