Selective deposition of etch-stop layer for enhanced patterning

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United States of America Patent

PATENT NO 11094542
APP PUB NO 20200168466A1
SERIAL NO

16744022

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Abstract

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Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Henri, Jon West Linn, US 68 10895
Jariwala, Bhavin Lake Oswego, US 3 10
Mahorowala, Arpan Pravin West Linn, US 13 197
Mohimi, Elham Hillsboro, US 8 35
Reddy, Kapu Sirish Portland, US 28 437
Shankar, Nagraj Tualatin, US 35 1317
Zhang, Pengyi Tigard, US 18 29

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