Conductive atomic force microscopy system with enhanced sensitivity and methods of using such a system
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United States of America Patent
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Nov 16, 2021
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app pub date -
Aug 28, 2020
filing date -
Aug 28, 2020
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Abstract
An illustrative method disclosed herein includes measuring at least one electrical-related parameter of a doped semiconductor material by simultaneously irradiating at least a portion of an upper surface of the doped semiconductor material, urging a conductive tip of a cantilever beam probe into conductive contact with the upper surface of the irradiated portion of the doped semiconductor material, and generating an electrical current that flows through the doped semiconductor material, through a measurement device that is operatively coupled to the cantilever beam probe and through the cantilever beam probe, wherein the measurement device measures the at least one electrical-related parameter of the doped semiconductor material.
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