Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device

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United States of America Patent

PATENT NO 11186771
APP PUB NO 20180346811A1
SERIAL NO

15990000

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Abstract

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Described herein is an etching solution comprising water, phosphoric acid solution (aqueous), and a hydroxyl group-containing solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.

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Patent Owner(s)

Patent OwnerAddress
VERSUM MATERIALS US LLC8555 SOUTH RIVER PARKWAY PATENT DEPT TEMPE AS 85284

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Yi-Chia Hsin Chu, TW 50 205
Liu, Wen Dar Hsin Chu, TW 41 209

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