Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end
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United States of America Patent
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Feb 8, 2022
Grant Date -
Oct 24, 2019
app pub date -
Jul 3, 2019
filing date -
Oct 30, 2017
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Abstract
Artificial synaptic devices with an HfO2-based ferroelectric layer that can be implemented in the CMOS back-end are provided. In one aspect, an artificial synapse element is provided. The artificial synapse element includes: a bottom electrode; a ferroelectric layer disposed on the bottom electrode, wherein the ferroelectric layer includes an HfO2-based material that crystallizes in a ferroelectric phase at a temperature of less than or equal to about 400° C.; and a top electrode disposed on the bottom electrode. An artificial synaptic device including the present artificial synapse element and methods for formation thereof are also provided.
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