Etching solution, additive, and etching method

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United States of America

PATENT NO 11254870
SERIAL NO

16784316

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Abstract

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According to one embodiment, an etching solution is provided. The etching solution is used for etching of silicon nitride. The etching solution includes: phosphoric acid; tetrafluoroboric acid; a silicon compound; water; and at least one of sulfuric acid and an ionic liquid.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBAMINATO-KU TOKYO 105-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hirakawa, Masaaki Yokohama, JP 23 95
Kanai, Takahiro Kamakura, JP 4 6
Uematsu, Ikuo Yokohama, JP 71 408

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