Method for setting a pressure in a cavern formed with the aid of a substrate and of a substrate cap, semiconductor system, in particular, wafer system
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United States of America
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Mar 15, 2022
Grant Date -
Jun 11, 2020
app pub date -
Dec 2, 2019
filing date -
Dec 2, 2019
priority date (Note) -
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Abstract
A method for setting a pressure in a cavern formed using a substrate and a substrate cap, the cavern being part of a semiconductor system, including an additional cavern formed with using the substrate and of the substrate cap, a microelectromechanical system being situated in the cavern, an additional microelectromechanical system being situated in the additional cavern, a diffusion area being situated in the substrate and/or in the substrate cap, the method includes a gas diffusing with the aid of the diffusion area from the surroundings into the cavern, during the diffusing, a diffusivity and/or a diffusion flow of the gas from the surroundings into the cavern being greater than an additional diffusivity and/or an additional diffusion flow of the gas from the surroundings into the additional cavern, and/or during the diffusing, the additional cavern being at least essentially protected from a penetration of the gas into the additional cavern.
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