Transistor structure with a stress layer

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United States of America Patent

PATENT NO 11349003
APP PUB NO 20200365394A1
SERIAL NO

15931744

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Abstract

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A new transistor structure is disclosed. This new structure has a dielectric stress layer in a three-dimensional structure outside of the gate region for modulation or the characteristics of the transistor. Additionally, trenches are created in the region between the source electrode and the drain electrode in such a manner so as to create ridges that traverse the gate region.

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Patent Owner(s)

Patent OwnerAddress
FINWAVE SEMICONDUCTOR INC15 AMHERST ROAD BELMONT MA 02478

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lu, Bin Watertown, US 200 2582

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