Dielectric layer and a semiconductor memory device including the dielectric layer as a capacitor dielectric layer

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United States of America Patent

PATENT NO 11417516
APP PUB NO 20190333858A1
SERIAL NO

16225432

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Abstract

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Provided is a dielectric layer that has a rock salt structure in a room temperature stable phase. The dielectric layer is made of a compound having a chemical formula of BexM1-xO, where M includes one of alkaline earth metals and x has a value greater than 0 and not greater than 0.19. A semiconductor memory device also is provided that includes a capacitor composed of a lower electrode; a dielectric layer disposed on the lower electrode; and an upper electrode disposed on the dielectric layer, wherein the dielectric layer has a rocksalt structure in a room temperature stable phase and is made of a compound having a chemical formula shown below,

description='In-line Formulae' end='lead'BexM1-xO,description='In-line Formulae' end='tail'

    where M comprises an alkaline earth metal and x has a value greater than 0 and not greater than 0.19.

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Patent Owner(s)

Patent OwnerAddress
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYSEOUL 02792

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baek, Seung Hyub Seoul, KR 23 97
Bielawski, Christopher W Ulsan, KR 16 239
Choi, Ji Won Seoul, KR 63 240
Kang, Chong Yun Seoul, KR 39 247
Kim, Jin Sang Seoul, KR 34 432
Kim, Sang Tae Seoul, KR 44 121
Kim, Seong Keun Seoul, KR 30 79
Larsen, Eric S Ulsan, KR 3 8
Lee, Woo Chui Seoul, KR 1 0
Song, Hyun Cheol Seoul, KR 7 92
Yum, Jung Hwan Ulsan, KR 2 3

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