Pattern height information correction system and pattern height information correction method
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United States of America Patent
Stats
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Sep 20, 2022
Grant Date -
Mar 18, 2021
app pub date -
Aug 4, 2020
filing date -
Sep 12, 2019
priority date (Note) -
In Force
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Abstract
This invention is directed to a pattern height information correction system which includes a contour line information of a pattern extracted from an acquired image including at least an AFM (atomic force microscope) module, a design information database that stores design information including at least layer information, and a computer system that divides the extracted pattern into regions based on the design information stored in the design information database relating to the extracted pattern and associates the divided regions with layer information, in which the computer system specifies a horizontal region designated as horizontal in advance from the divided regions, creates an approximated curved surface based on the specified horizontal region corresponding to the same layer information, and corrects height information of the extracted pattern using the approximated curved surface.

First Claim
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
HITACHI HIGH-TECH CORPORATION | TOKYO 105-6409 |
International Classification(s)

- [Classification Symbol]
- [Patents Count]
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Kagetani, Ryugo | Tokyo, JP | 3 | 1 |
Kashiwa, Taeko | Tokyo, JP | 1 | 1 |
Shindo, Hiroyuki | Tokyo, JP | 86 | 515 |
Yamasaki, Kenji | Tokyo, JP | 29 | 160 |
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