Chemical solution and method for treating substrate

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United States of America Patent

PATENT NO 11479863
APP PUB NO 20210180192A1
SERIAL NO

17183449

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Abstract

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The present invention provides a chemical solution having excellent storage stability and excellent defect inhibition performance. The present invention also provides a method for treating a substrate. The chemical solution according to an embodiment of the present invention is a chemical solution used for removing a transition metal-containing substance on a substrate. The chemical solution contains one or more kinds of halogen oxoacids selected from the group consisting of a halogen oxoacid and a salt thereof and one or more kinds of specific anions selected from the group consisting of SO42−, NO3−, PO43−, and BO33−. In a case where the chemical solution contains one kind of the specific anion, a content of one kind of the specific anion is 5 ppb by mass to 1% by mass with respect to a total mass of the chemical solution. In a case where the chemical solution contains two or more kinds of the specific anions, a content of each of two or more kinds of the specific anions is equal to or lower than 1% by mass with respect to the total mass of the chemical solution, and a content of at least one of two or more kinds of the specific anions is equal to or higher than 5 ppb by mass with respect to the total mass of the chemical solution.

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Patent Owner(s)

Patent OwnerAddress
FUJIFILM CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Seki, Hiroyuki Haibara-gun, JP 236 3423
Sugimura, Nobuaki Haibara-gun, JP 12 10
Takahashi, Tomonori Haibara-gun, JP 121 1303

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