Ion implantation method and ion implanter for performing the same

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United States of America Patent

PATENT NO 11482401
APP PUB NO 20200388465A1
SERIAL NO

15930442

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Abstract

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The present disclosure provides an ion implantation method and an ion implanter for realizing the ion implantation method. The above-mentioned ion implantation method comprises: providing a spot-shaped ion beam current implanted into the wafer; controlling the wafer to move back and forth in a first direction; controlling the spot-shaped ion beam current to scan back and forth in a second direction perpendicular to the first direction; and adjusting the scanning width of the spot-shaped ion beam current in the second direction according to the width of the portion of the wafer currently scanned by the spot-shaped ion beam current in the second direction. According to the ion implantation method provided by the present disclosure, the scanning path of the ion beam current is adjusted by changing the scanning width of the ion beam current, so that the beam scanning area is attached to the wafer, which greatly reduces the waste of the ion beam current, improves the effective ion beam current and increases productivity without increasing actual ion beam current.

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Patent Owner(s)

Patent OwnerAddress
SHANGHAI HUALI INTEGRATED CIRCUIT MFG CO LTDROOM 1060 BUILDING 1 NO 298 EAST KANGQIAO ROAD CHINA (SHANGHAI) PILOT FREE TRADE ZONE SHANGHAI 201315

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lai, Chaorong Shanghai, CN 2 2
Pei, Leihong Shanghai, CN 1 1

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