Silicon wafer forming method

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United States of America Patent

PATENT NO 11511374
APP PUB NO 20190039187A1
SERIAL NO

16046477

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Abstract

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A silicon wafer forming method includes: a block ingot forming step of cutting a silicon ingot to form block ingots; a planarizing step of grinding an end face of the block ingot to planarize the end face; a separation layer forming step of applying a laser beam of such a wavelength as to be transmitted through silicon to the block ingot, with a focal point of the laser beam positioned in the inside of the block ingot at a depth from the end face of the block ingot corresponding to the thickness of the wafer to be formed, to form a separation layer; and a wafer forming step of separating the silicon wafer to be formed from the separation layer.

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Patent Owner(s)

Patent OwnerAddress
DISCO CORPORATION13-11 OMORI-KITA 2-CHOME OTA-KU TOKYO 143-8580

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sekiya, Kazuma Tokyo, JP 212 1461

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