Laser annealing apparatus and method of manufacturing substrate having poly-si layer using the same
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United States of America Patent
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Jan 17, 2023
Grant Date -
Feb 4, 2021
app pub date -
Feb 26, 2020
filing date -
Jul 30, 2019
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Abstract
Provided are a laser annealing apparatus and a method of manufacturing a substrate having a poly-Si layer using the laser annealing apparatus. The laser annealing apparatus includes a laser beam source that emits a linearly polarized laser beam, a polygon mirror that rotates around a rotation axis and reflects the laser beam emitted from the laser beam source, a first Kerr cell disposed on a laser beam path between the laser beam source and the polygon mirror, and a first optical element that directs the laser beam reflected by the polygon mirror toward an amorphous Si layer where the laser beam is irradiated upon the amorphous Si layer.
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