Under-bump-metallization structure and redistribution layer design for integrated fan-out package with integrated passive device
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United States of America Patent
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Apr 18, 2023
Grant Date -
Mar 11, 2021
app pub date -
Nov 16, 2020
filing date -
Nov 2, 2017
priority date (Note) -
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Abstract
A semiconductor package includes an integrated passive device (IPD) including one or more passive devices over a first substrate; and metallization layers over and electrically coupled to the one or more passive devices, where a topmost metallization layer of the metallization layers includes a first plurality of conductive patterns; and a second plurality of conductive patterns interleaved with the first plurality of conductive patterns. The IPD also includes a first under bump metallization (UBM) structure over the topmost metallization layer, where the first UBM structure includes a first plurality of conductive strips, each of the first plurality of conductive strips electrically coupled to a respective one of the first plurality of conductive patterns; and a second plurality of conductive strips interleaved with the first plurality of conductive strips, each of the second plurality of conductive strips electrically coupled to a respective one of the second plurality of conductive patterns.
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