Power semiconductor device and a method for producing a power semiconductor device

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United States of America Patent

PATENT NO 11664160
SERIAL NO

17537322

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Abstract

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A power semiconductor device has a substrate on which power semiconductor switches are arranged and has a circuit board which includes conductive first plug-in connection contacts, a capacitor, a capacitor holding element that includes a reception device for receiving the capacitor, a temperature sensor for the capacitor, a temperature sensor holding element that has a plug-in region for conductive second plug-in connection contacts. There are temperature sensor connecting lines which electrically connect the temperature sensor and the second plug-in connection contacts to one another, at least one section of a temperature sensor connecting line being configured as a conductor track on the temperature sensor holding element, the second plug-in connection contacts forming an electrically conductive plug-in connection with the first plug-in connection contacts.

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Patent Owner(s)

  • SEMIKRON ELEKTRONIK GMBH & CO. KG

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dienstbier, Markus Greding, DE 1 0

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