Silicon nitride etching composition and method

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United States of America Patent

PATENT NO 11697767
SERIAL NO

17341138

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Abstract

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Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

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Patent Owner(s)

Patent OwnerAddress
ENTEGRIS INC129 CONCORD ROAD BILLERICA MA 01821

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bilodeau, Steven Michael Fairfield, US 2 0
Cooper, Emanuel I Scarsdale, US 71 1001
Hong, SeongJin Cheongju-si, KR 15 22
Wu, Hsing-Chen Hsinchu, TW 12 61
Yang, Min-Chieh Hsinchu, TW 33 220

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