Thermal atomic layer etching processes

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United States of America Patent

PATENT NO 11739427
SERIAL NO

17646274

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Abstract

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Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.

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Patent Owner(s)

Patent OwnerAddress
ASM IP HOLDING B VVERSTERKERSTRAAT 8 ALMERE 1322 AP

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Blomberg, Tom E Vantaa, FI 58 5935
Haukka, Suvi Helsinki, FI 94 21518
Sharma, Varun Helsinki, FI 103 2735
Tuominen, Marko Espoo, FI 102 10592
Zhu, Chiyu Helsinki, FI 71 9572

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