Chemical mechanical polishing pad and polishing method

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United States of America Patent

PATENT NO 11813713
APP PUB NO 20220226957A1
SERIAL NO

17154772

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Abstract

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CMP polishing pads or layers made from a polyurethane reaction product of a reaction mixture comprising (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 12 to 40 wt. %, based on the total weight of the liquid polyol component, of a curative mixture of one or more small chain difunctional polyols having from 2 to 9 carbon atoms, a liquid aromatic diamine, wherein the mole ratio of the total moles of hydroxyl and amino moieties in the liquid polyol, small chain difunctional polyols and liquid aromatic diamine to mole of isocyanate in the aromatic diisocyanates or linear aromatic isocyanate-terminated urethane prepolymer ranges from 1.0:1.0 to 1.15:1.0. The polishing layer is capable of forming a total texture depth, as measured by Sdr, a parameter defined by the ISO 25178 standard, upon treatment by a surface conditioning disk, in the range of from 0 to 0.4. Also disclosed is a chemical mechanical polishing method using the polishing pad together with a ceria abrasive slurry.

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Patent Owner(s)

Patent OwnerAddress
DUPONT ELECTRONIC MATERIALS HOLDING INC451 BELLEVUE ROAD NEWARK DE 19713

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Barton, Bryan E Lincoln University, US 23 13
Brugarolas, Brufau Teresa Philadelphia, US 15 48

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