Room-temperature semiconductor maser and applications thereof

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United States of America Patent

PATENT NO 11815588
APP PUB NO 20210003688A1
SERIAL NO

16920781

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Abstract

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A room-temperature semiconductor maser, including a first matching network, a second matching network, a heterojunction-containing transistor, and a resonant network. The output end of the first matching network is connected to the drain of the heterojunction-containing transistor. The input end of the second matching network is connected to the source of the heterojunction-containing transistor. The gate of the heterojunction-containing transistor is connected to the resonant network. The pumped microwaves are fed into the input end of the first matching network.

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Patent Owner(s)

Patent OwnerAddress
UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA611731 NO 2006 WEST AVENUE CHENGDU HI TECH ZONE (WEST DISTRICT SICHUAN) CHENGDU CITY SICHUAN PROVINCE 611731

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bu, Shirong Chengdu, CN 2 1
Chen, Liu Chengdu, CN 24 118
Fu, Yang Chengdu, CN 37 77
Ning, Junsong Chengdu, CN 2 1
Wang, Chenle Chengdu, CN 1 1
Wang, Ruyi Chengdu, CN 6 1
Wang, Zhanping Chengdu, CN 2 1
Zeng, Cheng Chengdu, CN 60 275

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