Methods for polishing dielectric layer in forming semiconductor device

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United States of America Patent

PATENT NO 11862472
APP PUB NO 20220406612A1
SERIAL NO

17893955

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Abstract

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Methods for polishing dielectric layers using an auto-stop slurry in forming semiconductor devices, such as three-dimensional (3D) memory devices, are provided. The methods include forming a stack structure in a staircase region and a core array region, the stack structure including a staircase structure in the staircase region; forming a dielectric layer over the staircase region and a peripheral region outside the stack structure; and polishing the dielectric layer using an auto-stop slurry containing a ceria-based abrasive.

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Patent Owner(s)

Patent OwnerAddress
YANGTZE MEMORY TECHNOLOGIES CO LTDWUHAN HUBEI 430000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Zhou, Xiaohong Wuhan, CN 141 6287

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