Methods for wet atomic layer etching of copper

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United States of America Patent

PATENT NO 11866831
APP PUB NO 20230140900A1
SERIAL NO

17725072

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Abstract

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The present disclosure provides a new wet atomic layer etch (ALE) process for etching copper. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching copper in a wet ALE process. By utilizing the new etch chemistries disclosed herein within a wet ALE process, the present disclosure provides a highly selective etch of copper with monolayer precision.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO 107-6325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abel, Paul Austin, US 19 179
Faguet, Jacques Austin, US 52 4097
Netzband, Christopher Albany, US 6 0
Sitaram, Arkalgud Albany, US 23 435

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