Lithography mask
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United States of America Patent
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-
Feb 13, 2024
Grant Date -
Nov 17, 2022
app pub date -
May 17, 2021
filing date -
May 17, 2021
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A mask for use in a semiconductor lithography process includes a substrate, a mask pattern disposed on the substrate, and a light absorbing border surrounding the mask pattern. The light absorbing border is inset from at least two edges of the substrate to define a peripheral region outside of the light absorbing border. In some designs, a first peripheral region extends from an outer perimeter of the light absorbing border to a first edge of the substrate, and a second peripheral region that extends from the outer perimeter of the light absorbing border to a second edge of the substrate, where the first edge of the substrate and the second edge of the substrate are on opposite sides of the mask pattern.
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