Material synthesis technology by microwave plasma torch with atmospheric pressure and high temperature

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United States of America

PATENT NO 11930585
SERIAL NO

17355259

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Abstract

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An apparatus for a material synthesis technology by microwave plasma torch with atmospheric pressure and high temperature. The apparatus includes a plasma torch system and a material growth system. In the plasma torch system, the cutting-edge breakdown happens through inputting the high-power microwave. Then the stable plasma torch with atmosphere pressure and high temperature is achieved in precursor at the open-end of the cylindrical metal tube. The precursors are decomposed by the plasma torch with high temperature and the active particles for material growth are achieved. In the material growth system, the motion and ingredients proportion of negative and positive icons or particles in the active particle beam are controlled by the adjustable static electric field in the space between the plasma torch and material growth space. The material-controlled growth is implemented by the heating system and the adjustable static electrical field.

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Patent Owner(s)

Patent OwnerAddress
CHENGDU LANDMARKS TECHNOLOGY CO LTDCHENGDU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bai, Ye Chengdu, CN 21 85
Li, Dashuai Chengdu, CN 1 14

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