Phase shift blankmask and photomask for EUV lithography

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United States of America Patent

PATENT NO 11940725
APP PUB NO 20220236635A1
SERIAL NO

17543534

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.

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Patent Owner(s)

Patent OwnerAddress
S&S TECH CO LTD42 HOSANDONG-RO DALSEO-GU DAEGU 42714

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Yong-Dae Daegu-si, KR 11 58
Lee, Jong-Hwa Daegu-si, KR 104 1238
Park, Min-Kwang Daegu-si, KR 4 0
Shin, Cheol Daegu-si, KR 96 405
Woo, Mi-Kyung Daegu-si, KR 5 0
Yang, Chul-Kyu Daegu-si, KR 25 37

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