Amorphous layers for reducing copper diffusion and method forming same

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United States of America Patent

PATENT NO 11967522
APP PUB NO 20220254679A1
SERIAL NO

17660508

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Abstract

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A method includes depositing an etch stop layer over a first conductive feature, performing a first treatment to amorphize the etch stop layer, depositing a dielectric layer over the etch stop layer, etching the dielectric layer to form an opening, etching-through the etch stop layer to extend the opening into the etch stop layer, and filling the opening with a conductive material to form a second conductive feature.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsu, Kai-Shiung Hsinchu, TW 24 36
Lin, Jyh-Nan Hsinchu, TW 19 25
Liu, Ding-I Hsinchu, TW 55 270
Wu, Chia-Yu Hsinchu, TW 38 113

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