Dry etching method, method for manufacturing semiconductor element, and cleaning method

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United States of America Patent

PATENT NO 11972955
APP PUB NO 20230154763A1
SERIAL NO

17612774

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Abstract

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A dry etching method which includes a dry etching step in which an etching gas containing a halogen fluoride being a compound of bromine or iodine and fluorine is brought into contact with a member to be etched (12) including an etching target being a target of etching with the etching gas to etch the etching target without using plasma. The etching target contains copper. Additionally, the dry etching step is performed under temperature conditions of from 140° C. to 300° C. Also disclosed is a method for manufacturing a semiconductor element and a cleaning method using the dry etching method.

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Patent Owner(s)

Patent OwnerAddress
RESONAC CORPORATIONTOKYO 105-7325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Matsui, Kazuma Tokyo, JP 87 1285

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