D-psicose crystal and preparation method thereof

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United States of America Patent

PATENT NO 11976090
APP PUB NO 20230279037A1
SERIAL NO

18154828

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Abstract

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The invention provides a D-psicose crystal and a preparation method thereof. The method comprises: adding a seed crystal to a D-psicose solution and stirring uniformly, subjecting the solution to crystallization by gradient cooling and constant-temperature crystallization alternately at 50-30° C., stopping the crystallization until the temperature of the solution is 30° C., separating the crystal by centrifugation, washing and drying, to obtain a D-psicose crystal. Rather than evaporative crystallization, organic solvent-assisted crystallization and ultrasonication, controllable crystallization by gradient cooling, constant-temperature crystallization, and other technical means are employed. Thus, the invention has low requirements for equipment, simple process, low energy consumption, and low preparation cost, and thus particularly suitable for large-scale industrial production and processing. The purity of the D-psicose crystal obtained is ≥98.5%, 80% by weight or more of the crystal has a grain size in the range of 20-40 meshes, and the yield per crystallization is ≥70%.

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Patent Owner(s)

Patent OwnerAddress
HENAN ZHONGDA HENGYUAN BIOTECHNOLOGY STOCK CO LTDEAST OF JINGER ROAD NORTH OF WEIER ROAD LINYING INDUSTRIAL PARK LUOHE CITY HENAN 462600

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jin, Ziheng Luohe, CN 17 0
Li, Linzheng Luohe, CN 17 0
Wang, Sanying Luohe, CN 3 0
Wen, Yanjun Luohe, CN 14 0

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