Marks for overlay measurement and overlay error correction

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United States of America Patent

PATENT NO 12002765
APP PUB NO 20230215809A1
SERIAL NO

17568041

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Importance

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Abstract

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A mark for overlay error measurement and overlay error measurement is provided. The mark includes a first pattern and a second pattern. The first pattern is disposed on a first surface of a substrate. The second pattern is disposed on a second surface of the substrate. The second surface of the substrate is opposite to the first surface of the substrate. The first pattern overlaps at least a portion of the second pattern, and the first pattern and the second pattern collaboratively define a first overlay error.

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Patent Owner(s)

Patent OwnerAddress
NANYA TECHNOLOGY CORPORATIONNO 98 NANLIN RD TAISHAN DIST NEW TAIPEI CITY 243

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ma, Shih-Yuan New Taipei, TW 5 4

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