Electronic semiconducting device, method for preparing the electronic semiconducting device and compound

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United States of America Patent

PATENT NO 12022672
APP PUB NO 20220416188A1
SERIAL NO

17881878

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Abstract

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The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising

    (i) at least one first hole transport matrix compound consisting of covalently bound atoms and(ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom,wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.

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Patent Owner(s)

  • NOVALED GMBH

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Heggemann, Ulrich Dresden, DE 33 55
Hummert, Markus Dresden, DE 30 26

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