Chemical mechanical polishing slurry composition and method of polishing metal layer

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United States of America

PATENT NO 12024651
SERIAL NO

17688869

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Abstract

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A CMP slurry composition and a method of polishing a metal layer are provided. In some embodiments, the CMP slurry composition includes about 0.1 to 10 parts by weight of a metal oxide, and about 0.1 to 10 parts by weight of a chelator. The chelator includes a thiol compound or a thiolether compound.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chao, Huang-Lin Hillsboro, US 118 101
Lee, An-Hsuan Hsinchu, TW 15 2
Lee, Shen-Nan Hsinchu County, TW 56 195
Liao, Chun-Hung Taichung, TW 31 13
Tsai, Teng-Chun Hsinchu, TW 275 2741
Wu, Chen-Hao Hsinchu, TW 36 31

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