Photoresist for semiconductor fabrication

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United States of America Patent

PATENT NO 12044966
APP PUB NO 20230367208A1
SERIAL NO

18355641

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Abstract

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An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yen-Yu Hsinchu, TW 267 1699
Kuo, Yi-Chen Hsinchu, TW 38 164
Lee, Tze-Liang Hsinchu, TW 403 4505
Li, Jr-Hung Hsinchu County, TW 83 264
Liu, Chih-Cheng Hsinchu, TW 84 445
Yang, Chi-Ming Hsinchu, TW 184 1930

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