Wet etching chemistry and method of forming semiconductor device using the same

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United States of America Patent

PATENT NO 12046476
APP PUB NO 20230307240A1
SERIAL NO

17703997

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Abstract

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A wet etching chemistry to selectively remove a polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer in a process of forming an interconnect structure is provided. The wet etching chemistry includes: two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%; an Alkali source amine, at least comprising a tertiary amine; an inhibitor; and water. In some embodiment, the wet etching chemistry is free of a peroxide to avoid damage to the WdC hard mask.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Li-Min Hsinchu County, TW 34 249
Huang, Kuo-Bin Hsinchu County, TW 88 144
Li, Meng-Hsien Hsinchu, TW 5 4
Shen, Chieh-Yi Taipei, TW 6 15
Wang, Ying-Chuen Taichung, TW 2 1
Yeh, Ming-Hsi Hsinchu, TW 153 567

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