Semiconductor power device
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United States of America Patent
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Aug 20, 2024
Grant Date -
Nov 18, 2021
app pub date -
Jul 28, 2021
filing date -
Sep 29, 2017
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Abstract
A semiconductor power device includes a substrate; a buffer structure formed on the substrate; a barrier structure formed on the buffer structure; a channel layer formed on the barrier structure; and a barrier layer formed on the channel layer; wherein the barrier structure includes a first functional layer on the buffer structure, a second functional layer formed between the first functional layer and the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer; wherein a material of the first back-barrier layer includes Alx1Ga1-x1N, a material of the first functional layer includes Alx2Ga1-x2N, a material of the interlayer includes Alx3Ga1-x3N, a material of the second functional layer includes Alx4Ga1-x4N, wherein 0
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First Claim
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Patent Owner(s)
Patent Owner Address EPISTAR CORPORATION 21 LI-HSIN RD SCIENCE-BASED INDUSTRIAL PARK HSINCHU 300 International Classification(s)
Inventor(s)
Inventor Name
Address
# of filed Patents
Total Citations
Chang, Tsung-Cheng
Hsinchu, TW
8
24
Liu, Chia-Cheng
Hsinchu, TW
38
144
Tu, Shang-Ju
Hsinchu, TW
7
17
Yang, Ya-Yu
Hsinchu, TW
11
37
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