Method of controlling oxygen vacancy concentration in a semiconducting metal oxide

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United States of America Patent

PATENT NO 12080801
APP PUB NO 20220231171A1
SERIAL NO

17571858

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A method of controlling oxygen vacancy concentration in a semiconducting metal oxide includes exposing a treated surface of a crystalline metal oxide to water at a temperature and pressure sufficient to maintain the water in a liquid phase. During the exposure, a portion of the water is adsorbed onto the treated surface and dissociates into atomic oxygen and hydrogen. The atomic oxygen is injected into and diffuses through the crystalline metal oxide, forming isolated oxygen interstitials and oxygen defect complexes. The isolated oxygen interstitials replace oxygen vacancies in the crystalline metal oxide.

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Patent Owner(s)

Patent OwnerAddress
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS352 HENRY ADMINISTRATION BUILDING 506 SOUTH WRIGHT STREET URBANA IL 61801

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Seebauer, Edmund G Urbana, US 9 453

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