Polishing liquid and chemical mechanical polishing method
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
Sep 24, 2024
Grant Date -
N/A
app pub date -
Nov 11, 2021
filing date -
Nov 11, 2021
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention provides a polishing liquid which reduces the occurrence of dishing and erosion on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished, and makes it possible to manufacture a semiconductor product having excellent reliability. The present invention also provides a chemical mechanical polishing method using the polishing liquid. The polishing liquid of an embodiment of the present invention is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, and includes a colloidal silica, an organic acid, a passivation film forming agent, an anionic surfactant; hydrogen peroxide; potassium; and sodium, in which a value of a difference obtained by subtracting the ClogP value of the passivation film forming agent from the ClogP value of the anionic surfactant is more than 2.00 and less than 8.00, a mass ratio of a content of potassium to a content of sodium is 1×106 to 1×109, and the pH is 8.0 to 10.5.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully