Etching method with metal hard mask

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United States of America Patent

PATENT NO 12100601
APP PUB NO 20240112923A1
SERIAL NO

18257751

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Abstract

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Embodiments of the present disclosure provide an etching method with a metal hard mask. The method is performed on a wafer surface and includes sequentially forming a metal hard mask layer and at least one functional film layer on a wafer surface in a direction away from the wafer surface. The method includes performing a plurality of etching processes on the at least one functional layer and the metal hard mask layer sequentially in a direction close to the wafer surface. An etching gas adopted by at least one etching process includes a hydrogen element and a fluorine element. A ratio of a content of the hydrogen element in the etching gas to a content of the fluorine element in the etching gas is smaller than a predetermined threshold to reduce generation of a byproduct of hydrogen fluorine.

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Patent Owner(s)

Patent OwnerAddress
BEIJING NAURA MICROELECTRONICS EQUIPMENT CO LTDBEIJING 100176

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akiba, Aki Beijing, CN 2 0
Liu, Zhaocheng Beijing, CN 5 1
Zhang, Yu Beijing, CN 1971 9206

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