Silicon carbide substrate

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United States of America Patent

PATENT NO 12104278
APP PUB NO 20220220637A1
SERIAL NO

17611138

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Abstract

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A silicon carbide substrate has a first main surface, a second main surface, and a chamfered portion. The second main surface is opposite to the first main surface. The chamfered portion is contiguous to each of the first main surface and the second main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. A surface manganese concentration in the chamfered portion is 1×1011 atoms/cm2 or less.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO ELECTRIC INDUSTRIES LTDOSAKA-SHI OSAKA 541-0041

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Honke, Tsubasa Osaka, JP 29 26
Okita, Kyoko Osaka, JP 63 152

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